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Showing results 1 to 20 of 34

Issue DateTitleAuthor(s)TypeView
2000-023.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communicationsLee, JL; Kim, JK; Choi, Kyoung Jin; Yoo, HMARTICLE658
2003-08Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic contacts to AlxGa1-xAs/InGaAs (x=0.75) pseudomorphic high electron mobility transistorChoi, Kyoung Jin; Han, SY; Lee, JL; Moon, JK; Park, M; Kim, HARTICLE809
2002-12Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopyChoi, Kyoung Jin; Jang, HW; Lee, JLARTICLE564
2003Co-implantation of Mn+N into p-type GaN for high T-C ferromagnetismBaik, Jeong Min; Jang, HW; Shin, HJ; Lee, MK; Shon, Y; Kang, TW; Lee, JLARTICLE870
1999Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopyChoi, Kyoung Jin; Lee, JLARTICLE725
2005Determination of interface dipole energy at the interface of ruthenium-oxide-coated anode with organic material using synchrotron radiation photoemission spectroscopyKim, SY; Baik, Jeong Min; Lee, JLARTICLE679
2003-01Effect of microstructural change on magnetic property of Mn-implanted p-type GaNBaik, Jeong Min; Jang, HW; Kim, JK; Lee, JLARTICLE640
2003-09Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaNBaik, Jeong Min; Kim, HS; Park, CG; Lee, JLARTICLE754
1999-09Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistorChoi, Kyoung Jin; Lee, JL; Yoo, HMARTICLE638
2001-07Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistorsChoi, Kyoung Jin; Lee, JLARTICLE579
2005-06Effects of implanted nitrogen on the microstructural, optical, and magnetic properties of Mn-implanted GaNBaik, Jeong Min; Jo, HK; Kang, TW; Lee, JLARTICLE661
2002-01Effects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistorChoi, Kyoung Jin; Lee, JL; Mun, JK; Kim, HARTICLE570
2002-07Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistorChoi, Kyoung Jin; Jeon, CM; Jang, HW; Lee, JLARTICLE585
2002-05Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistorsChoi, Kyoung Jin; Moon, JK; Park, M; Kim, HC; Lee, JLARTICLE631
2003-09Electrical characteristics of metal-insulator-semiconductor Schottky diodes using a photowashing treatment in AlzGa1-xAs/InGaAs (X=0.75) pseudimorphic high electron mobility transistorsHan, SY; Choi, Kyoung Jin; Lee, JL; Mun, JK; Park, M; Kim, HARTICLE643
2004-02Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaNBaik, Jeong Min; Shon, Y; Kang, TW; Lee, JLARTICLE633
2004Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFSBaik, Jeong Min; Kim, SU; Koo, YM; Kang, TW; Lee, JLARTICLE695
2005-07Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasmaBaik, Jeong Min; Shon, Y; Kang, TW; Lee, JLARTICLE622
2002-05Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contactJeon, CM; Jang, HW; Choi, Kyoung Jin; Bae, SB; Lee, JH; Lee, JLARTICLE659
2005-11Fabrication of vertically well-aligned (Zn,Mn)O nanorods with room temperature ferromagnetismBaik, Jeong Min; Lee, JLARTICLE650
Showing results 1 to 20 of 34

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