Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN
Cited 29 times inCited 31 times in
- Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN
- Baik, Jeong Min; Shon, Y; Kang, TW; Lee, JL
- MOLECULAR-BEAM EPITAXY; (GA,MN)N; NITRIDE; FILMS
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.84, no.7, pp.1120 - 1122
- N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.