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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy

Cited 27 times inthomson ciCited 29 times inthomson ci
Title
Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy
Author
Choi, Kyoung JinLee, JL
Keywords
capacitance DLTS; surface leakeage current; transconductance dispersion
Issue Date
2001-02
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.2, pp.190 - 195
Abstract
The negative transconductance dispersion in a GaAs metal-semiconductor held-effect transistor (MESPET) was interpreted using both surface leakage current and capacitance deep level transient spectroscopy (DLTS) measurements. The transconductance of the device was reduced by 10% in the frequency range of 10 Hz similar to 1 kHz, The transition frequency shifted to higher frequency region with the increase of device temperature. The activation energy for the change of the transition frequency was determined to be 0.66 +/- 0.02 eV, It was found that the activation energy for the conductance of electrons on the surface of GaAs was 0.63 +/- 0.01 eV, In the DLTS spectra, two types of hole-like signals with activation energies, 0.65 +/- 0.07 eV (H1) and 0.88 +/- 0.04 eV (H2), were observed. The activation energy of H1 trap agrees well with those obtained from the transconductance dispersion and surface leakage current measurements. This demonstrates that surface state H1 causes the generation of surface leakage current, leading to the transconductance dispersion in the MESFET. Using the experimental results, a model for the evolution of hole-like signal by surface states in the capacitance DLTS is proposed.
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DOI
10.1109/16.902715
ISSN
0018-9383
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MSE_Journal Papers
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