Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy
Cited 27 times inCited 29 times in
- Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy
- Choi, Kyoung Jin; Lee, JL
- capacitance DLTS; surface leakeage current; transconductance dispersion
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.2, pp.190 - 195
- The negative transconductance dispersion in a GaAs metal-semiconductor held-effect transistor (MESPET) was interpreted using both surface leakage current and capacitance deep level transient spectroscopy (DLTS) measurements. The transconductance of the device was reduced by 10% in the frequency range of 10 Hz similar to 1 kHz, The transition frequency shifted to higher frequency region with the increase of device temperature. The activation energy for the change of the transition frequency was determined to be 0.66 +/- 0.02 eV, It was found that the activation energy for the conductance of electrons on the surface of GaAs was 0.63 +/- 0.01 eV, In the DLTS spectra, two types of hole-like signals with activation energies, 0.65 +/- 0.07 eV (H1) and 0.88 +/- 0.04 eV (H2), were observed. The activation energy of H1 trap agrees well with those obtained from the transconductance dispersion and surface leakage current measurements. This demonstrates that surface state H1 causes the generation of surface leakage current, leading to the transconductance dispersion in the MESFET. Using the experimental results, a model for the evolution of hole-like signal by surface states in the capacitance DLTS is proposed.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.