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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

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Title
Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy
Author
Choi, Kyoung JinLee, JL
Keywords
ELECTRON-MOBILITY TRANSISTOR; MOLECULAR-BEAM EPITAXY; GAAS-MESFETS; TRANSCONDUCTANCE DISPERSION; CARRIER CAPTURE; DLTS SPECTRA; TRAPS; SEMICONDUCTORS
Issue Date
2001-05
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.19, no.3, pp.615 - 621
Abstract
Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate. No hole-like signals were observed in the DLTS spectra of the fat field-effect transistor (FATFET) having negligible ratio of the ungated surface to the total area between the source and the drain. The activation energies of both surface states were measured to be 0.50±0.03 and 0.81±0.01 eV.
URI
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DOI
10.1116/1.1368679
ISSN
1071-1023
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MSE_Journal Papers
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