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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors

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Title
Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors
Author
Choi, Kyoung JinLee, JL
Keywords
AlGaAs/InGaAs; Hot-electron stress; Three-terminal breakdown; Two-terminal
Issue Date
2001-07
Publisher
SPRINGER
Citation
JOURNAL OF ELECTRONIC MATERIALS, v.30, no.7, pp.885 - 890
Abstract
The effects of hot-electron stress on electrical properties in AlGaAs/InGaAs pseudomorphic high electron mobility transistors were investigated using current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and transconductance dispersion measurements. After hot-electron stress, the three-terminal gate-drain breakdown characteristics were improved and the gate-drain capacitance was decreased even though no difference was found in both DLTS and transconductance dispersion results. These results suggest that hot electrons were trapped at the interface of the passivation layer, Si3N4, with AlGaAs, locating between gate and source/drain electrodes, leading to the increase of the depletion region under the ungated region. On the other hand, the two-terminal gate-drain breakdown characteristics were deteriorated by hot-electron stress. This was due to the reduction of the Schottky barrier height.
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DOI
10.1007/s11664-001-0076-1
ISSN
0361-5235
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