Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
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- Title
- Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
- Author
- Jeon, CM; Jang, HW; Choi, Kyoung Jin; Bae, SB; Lee, JH; Lee, JL
- Keywords
- MICROSTRUCTURE; BEHAVIOR; GALLIUM; HFETS
- Issue Date
- 2002-05
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.46, no.5, pp.695 - 698
- Abstract
- AlGaN/GaN heterostructure field effect transistor (HFET) with the room-temperature ohmic contact (1.0 x 10(-4) Omegacm(2)) was demonstrated through the surface treatment using N-2 inductively coupled plasma. The N-2 plasma produced N vacancies on the surface of undoped AlGaN, leading to ohmic contact at as-deposited state, The fabricated HFET exhibited the saturation drain current density of 736 mA/mm and transconductance of 148 mS/mm. This room-temperature ohmic contact was suitable for fabrication of AlGaN/GaN HFET.
- URI
- ; Go to Link
- DOI
- 10.1016/S0038-1101(01)00325-2
- ISSN
- 0038-1101
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
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