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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact

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Title
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
Author
Jeon, CMJang, HWChoi, Kyoung JinBae, SBLee, JHLee, JL
Keywords
MICROSTRUCTURE; BEHAVIOR; GALLIUM; HFETS
Issue Date
2002-05
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID-STATE ELECTRONICS, v.46, no.5, pp.695 - 698
Abstract
AlGaN/GaN heterostructure field effect transistor (HFET) with the room-temperature ohmic contact (1.0 x 10(-4) Omegacm(2)) was demonstrated through the surface treatment using N-2 inductively coupled plasma. The N-2 plasma produced N vacancies on the surface of undoped AlGaN, leading to ohmic contact at as-deposited state, The fabricated HFET exhibited the saturation drain current density of 736 mA/mm and transconductance of 148 mS/mm. This room-temperature ohmic contact was suitable for fabrication of AlGaN/GaN HFET.
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DOI
10.1016/S0038-1101(01)00325-2
ISSN
0038-1101
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MSE_Journal Papers
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