Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
Cited 2 times inCited 1 times in
- Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
- Choi, Kyoung Jin; Moon, JK; Park, M; Kim, HC; Lee, JL
- Band bending; Field-effect transistor; Ga antisites; Leakage current; Photowashing; X-ray photoemission spectroscopy
- Issue Date
- JAPAN SOC APPLIED PHYSICS
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.5A, pp.2894 - 2899
- Effects of photowashing treatment on gate leakage current (I-GD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I-GD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I-GD.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.