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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors

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Title
Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors
Author
Choi, Kyoung JinMoon, JKPark, MKim, HCLee, JL
Keywords
Band bending; Field-effect transistor; Ga antisites; Leakage current; Photowashing; X-ray photoemission spectroscopy
Issue Date
2002-05
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.5A, pp.2894 - 2899
Abstract
Effects of photowashing treatment on gate leakage current (I-GD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I-GD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I-GD.
URI
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DOI
10.1143/JJAP.41.2894
ISSN
0021-4922
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MSE_Journal Papers
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