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Baik, Jeong Min
Nano Energy and Environmental Materials Lab
Research Interests
  • Nanogenerators, antimicrobial material, catalysis, smart sensors

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Incorporation of oxygen donors in AlGaN

Cited 21 times inthomson ciCited 18 times inthomson ci
Title
Incorporation of oxygen donors in AlGaN
Author
Jang, HWBaik, Jeong MinLee, MKShin, HJLee, JL
Keywords
Energy separation; Near-surface regions; Reactor pressure; Scanning photoemission microscopy (SPEM)
Issue Date
2004
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.8, pp.G536 - G540
Abstract
The chemistry of oxygen atoms at the surface of an AlGaN layer for Al 0.35Ga0.65N/GaN heterostructures was investigated by scanning photoemission microscopy (SPEM) using synchrotron radiation. SPEM imaging and space-resolved photoemission spectroscopy showed that the oxygen atoms were preferentially incorporated into AlGaN rather than GaN due to the high reactivity of Al with oxygen. In situ annealing at 1000°C could lead to the outdiffusion of oxygen impurities from the bulk AlGaN, resulting in a significant increase in the intensity of Al-O bonds at the AlGaN surface. Therefore, it is suggested that the unintentional doping of oxygen impurities in AlGaN could yield a heavily doped n-type AlGaN layer, resulting in a drastic reduction in effective Schottky barrier heights of metal contacts on AlGaN/GaN heterostructures.
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DOI
10.1149/1.1768951
ISSN
0013-4651
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