BROWSE

Related Researcher

Author's Photo

Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

ITEM VIEW & DOWNLOAD

Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

Cited 27 times inthomson ciCited 30 times inthomson ci
Title
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
Author
Choi, Kyoung JinJang, HWLee, JL
Keywords
TRANSCONDUCTANCE DISPERSION
Issue Date
2003-02
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.82, no.8, pp.1233 - 1235
Abstract
The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. From these, the origin of the ICP-induced electron trap was suggested to be V-N or a V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current.
URI
Go to Link
DOI
10.1063/1.1557316
ISSN
0003-6951
Appears in Collections:
MSE_Journal Papers
Files in This Item:
2-s2.0-0037463335.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU