BROWSE

Related Researcher

Author's Photo

Baik, Jeong Min
Nano Energy and Environmental Materials Lab
Research Interests
  • Nanogenerators, antimicrobial material, catalysis, smart sensors

ITEM VIEW & DOWNLOAD

Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS

Cited 2 times inthomson ciCited 3 times inthomson ci
Title
Evidence of mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS
Author
Baik, Jeong MinKim, SUKoo, YMKang, TWLee, JL
Keywords
MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; ROOM-TEMPERATURE; (GA,MN)N; FILMS; GAMNN
Issue Date
2004
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.12, pp.G313 - G315
Abstract
The local structure of Mn impurities in a ferromagnetic (Ga, Mn)N semiconductor was investigated using extended X-ray absorption fine structure (EXAFS). The ferromagnetic signal increased and maintained up to room temperature as N ions were implanted into Mn-implanted GaN. The X-ray results showed that Mn ions occupied Ga sites to form (Ga, Mn) N semiconductor. The Mn concentration occupying Ga sites increased from 2.5 to 3.8% and the formation of Mn-N compounds such as Mn6N2.58 and Mn3N2 was prohibited by implanting N atoms. As a result, the N-vacancies reduced and net hole concentration increased, resulting in the enhancement of ferromagnetic property.
URI
Go to Link
DOI
10.1149/1.1813365
ISSN
1099-0062
Appears in Collections:
MSE_Journal Papers
Files in This Item:
2-s2.0-11144311042.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU