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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique

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Title
GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique
Author
Lee, JLChoi, Kyoung Jin
Keywords
POWER
Issue Date
1998-05
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
ELECTRONICS LETTERS, v.34, no.11, pp.1152 - 1153
Abstract
A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH(4))(2)S(x) treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190mS/mm was obtained for MESFETs with 1.0 mu m gate length, fabricated on the lavers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.
URI
https://scholarworks.unist.ac.kr/handle/201301/7716
DOI
10.1049/el:19980819
ISSN
0013-5194
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