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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy

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Title
Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy
Author
Choi, Kyoung JinJang, HWLee, JL
Keywords
TRANSCONDUCTANCE DISPERSION
Issue Date
2002-12
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.234, no.3, pp.835 - 839
Abstract
Inductively-coupled-plasma (ICP) damage on n-type GaN was characterized using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy. A new electron trap, localized near the contact, as well as a pre-existing trap was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. The Fermi energy level shifted to the conduction band minimum due to the generation Of V-N. From these, the origin of T2 was suggested to be V-N or V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current.
URI
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DOI
10.1002/1521-3951(200212)234:3<835::AID-PSSB835>3.0.CO;2-4
ISSN
0370-1972
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MSE_Journal Papers
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