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백정민

Baik, Jeong Min
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Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma

Author(s)
Baik, Jeong MinShon, YKang, TWLee, JL
Issued Date
2005-07
DOI
10.1063/1.1999862
URI
https://scholarworks.unist.ac.kr/handle/201301/7386
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=23644456168
Citation
APPLIED PHYSICS LETTERS, v.87, no.4, pp.1 - 3
Abstract
Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 °C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of MnGa-VN complex and the enhancement of Mn activation.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
MN-IMPLANTED GANMG-DOPED GANMAGNETIC-PROPERTIESSEMICONDUCTORSFILMSACCEPTOR

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