Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma
Cited 1 times inCited 1 times in
- Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma
- Jeon, CM; Jang, HW; Choi, Kyoung Jin; Bae, SB; Lee, JH; Lee, JL
- RESISTANCE; NITRIDES; GALLIUM; HFETS; GAN
- Issue Date
- ELECTROCHEMICAL SOC INC
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.7, pp.G45 - G47
- Room-temperature Ti/Al ohmic contact on undoped AlGaN/GaN heterostructure was demonstrated through surface treatment using N-2 inductively coupled plasma. The specific contact resistivity was reduced from Schottky behavior to 1.02 x 10(-4) Omega cm(2) by the treatment. Increases in Ga-N binding energy and production of metallic Ga and Al conducting layers were found at the treated surface. This indicates that N vacancies, acting as donors for electrons, were produced at the treated surface, resulting in a shift of the Fermi level to near the conduction band, via the formation of ohmic contact.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.