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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma

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Title
Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma
Author
Jeon, CMJang, HWChoi, Kyoung JinBae, SBLee, JHLee, JL
Keywords
RESISTANCE; NITRIDES; GALLIUM; HFETS; GAN
Issue Date
2002-07
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.7, pp.G45 - G47
Abstract
Room-temperature Ti/Al ohmic contact on undoped AlGaN/GaN heterostructure was demonstrated through surface treatment using N-2 inductively coupled plasma. The specific contact resistivity was reduced from Schottky behavior to 1.02 x 10(-4) Omega cm(2) by the treatment. Increases in Ga-N binding energy and production of metallic Ga and Al conducting layers were found at the treated surface. This indicates that N vacancies, acting as donors for electrons, were produced at the treated surface, resulting in a shift of the Fermi level to near the conduction band, via the formation of ohmic contact.
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DOI
10.1149/1.1479296
ISSN
1099-0062
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MSE_Journal Papers
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