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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor

Author(s)
Choi, Kyoung JinJeon, CMJang, HWLee, JL
Issued Date
2002-07
DOI
10.1116/1.1491554
URI
https://scholarworks.unist.ac.kr/handle/201301/7698
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035982590
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.20, no.4, pp.1574 - 1577
Abstract
The changes in atomic composition and surface states at the surface of AlGaN caused by photowashing treatment were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of surface treatment on the electrical properties of AlGaN/GaN HFETs was examined by both current-voltage (I-V) and transconductance dispersion measurements. From these, the origin of changes in electrical properties caused by the photowashing treatment was proposed.
Publisher
A V S AMER INST PHYSICS
ISSN
1071-1023

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