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Baik, Jeong Min
Nano Energy and Environmental Materials Lab
Research Interests
  • Nanogenerators, antimicrobial material, catalysis, smart sensors

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Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductor

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Title
Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductor
Author
Baik, Jeong MinLee, JLShon, YKang, TW
Keywords
Diluted magnetic semiconductors;  GaMnN;  PL;  Raman
Issue Date
2004-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no., pp.S605 - S608
Abstract
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Compared with the Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. The intensity of the Mn-related photoluminescence peak increased as N ions were implanted, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GaN. From Raman spectra, a compressive stress was induced in the (Mn+N)implanted GaN, meaning that the concentration of Mn ions that occupied Ga sites increased, resulting in the reduction of Mn-N compounds such as Mn6N2.58. As a result, the N-vacancies reduced and net hole concentration increased, leading to the enhancement of the ferromagnetic property.
URI
https://scholarworks.unist.ac.kr/handle/201301/7404
ISSN
0374-4884
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