Effect of microstructural change on magnetic property of Mn-implanted p-type GaN
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- Effect of microstructural change on magnetic property of Mn-implanted p-type GaN
- Baik, Jeong Min; Jang, HW; Kim, JK; Lee, JL
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585
- The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.
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