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백정민

Baik, Jeong Min
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Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Author(s)
Baik, Jeong MinJang, HWKim, JKLee, JL
Issued Date
2003-01
DOI
10.1063/1.1541111
URI
https://scholarworks.unist.ac.kr/handle/201301/7398
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037468076
Citation
APPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585
Abstract
The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.
Publisher
AMER INST PHYSICS
ISSN
0003-6951

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