The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN
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- The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN
- Baik, Jeong Min; Lee, JL
- (Ga,Mn)N; Ferromagnetic semiconductor; Ion implantation; SRPES
- Issue Date
- KOREAN INST METALS MATERIALS
- METALS AND MATERIALS INTERNATIONAL, v.10, no.6, pp.555 - 558
- The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900degreesC. Synchrotron radiation photoemission spectroscopy revealed that the Ga-Mn magnetic phases contributing to ferromagnetic properties increased. Mn-N binary phases such as Mn6N2.58 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga-Mn magnetic phases.
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