| 2002-10 | A new 50-nm nMOSFET with side-gates for virtual source-drain extensions | Choi, YJ; Choi, BY; Kim, Kyung Rok; Lee, JD; Park, BG | ARTICLE | 885 |
| 2002-12 | A practical SPICE model based on the physics and characteristics of realistic single-electron transistors | Lee, SH; Kim, DH; Kim, Kyung Rok; Lee, JD; Park, BG; Gu, YJ; Yang, GY; Kong, JT | ARTICLE | 930 |
| 2004-01 | A SPICE model of realistic single-electron transistors and its application to multiple-valued logic | Song, KW; Kim, Kyung Rok; Lee, JD; Park, BG; Lee, SH; Kim, DH | ARTICLE | 844 |
| 2006-05 | Analytical modeling of field-induced interband tunneling-effect transistors and its application | Song, SH; Kim, Kyung Rok; Kang, SW; Kim, JH; Huh, JI; Kang, KC; Song, KW; Lee, JD; Park, BG | ARTICLE | 844 |
| 2004-04 | Analytical modeling of realistic single-electron transistors based on metal-oxide-semiconductor structure with a unique distribution function
in the Coulomb-Blockade oscillation region | Kim, Kyung Rok; Song, KW; Kim, DH; Baek, G; Kim, HH; Huh, JI; Lee, JD; Park, BG | ARTICLE | 809 |
| 2001-01 | Application of synthetic polyamine flocculants for dye wastewater treatment | Choi, JH; Shin, WS; Lee, SH; Joo, DJ; Lee, JD; Choi, SJ; Park, LS | ARTICLE | 857 |
| 2002-01 | Characteristics of silicon-on-insulator single-electron transistors with electrically induced tunnel barriers | Kim, Kyung Rok; Kim, DH; Lee, JD; Park, BG | ARTICLE | 744 |
| 2005-04 | Complementary self-biased logics based on single-electron transistor (SET)/CMOS hybrid process | Song, KW; Lee, YK; Sim, JS; Kim, Kyung Rok; Lee, JD; Park, BG; You, YS; Park, JO; Jin, YS; Kim, YW | ARTICLE | 864 |
| 2003-05-16 | Complementary Self-Biased Scheme for the Robust Design of CMOS/SET Hybrid Multi-Valued Logic | Kim, Kyung Rok; Song, KW; Lee, SH; Kim, DH; Kyung, J; Baek, G; Lee, CA; Lee, JD; Park, BG | CONFERENCE | 118 |
| 2004-04 | Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor | Kim, Kyung Rok; Kim, DH; Lee, JD; Park, BG | ARTICLE | 882 |
| 2002-05 | Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor | Kim, DH; Kim, Kyung Rok; Sung, SK; Lee, JD; Park, BG | ARTICLE | 894 |
| 2002-07 | Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire | Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG | ARTICLE | 819 |
| 2005-05 | Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance | Kim, Kyung Rok; Kim, HH; Song, KW; Huh, JI; Lee, JD; Park, BG | ARTICLE | 864 |
| 2000-03 | High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2 | Yoon, Tae-Sik; Kwon, JY; Lee, DH; Kim, KB; Min, SH; Chae, DH; Kim, DH; Lee, JD; Park, BG; Lee, HJ | ARTICLE | 96 |
| 1999-12 | Nanocrystal memory cell using high-density Si0.73Ge0.27 quantum dot array | Chae, DH; Kim, DH; Lee, Y; Kwak, CH; Lee, JD; Park, BG; Yoon, Tae-Sik; Kwon, JY; Kim, KB; Kim, KR; Park, N; Yoon, H; Jeong, SJ | ARTICLE | 105 |
| 2002-10 | Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately
doped body | Kim, Kyung Rok; Kim, DH; Sung, SK; Lee, JD; Park, BG | ARTICLE | 771 |
| 2002-04 | Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic | Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D | ARTICLE | 791 |
| 2004-06 | Silicon-based field-induced band-to-band tunneling effect transistor | Kim, Kyung Rok; Kim, DH; Song, KW; Baek, G; Kim, HH; Huh, JI; Lee, JD; Park, BG | ARTICLE | 821 |
| 2001-06-25 | Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Quantum Wire | Kim, DH; Kim, Kyung Rok; Sung, SK; Choi, BH; Hwang, SW; Ahn, D; Lee, JD; Park, BG | CONFERENCE | 129 |
| 2002-04 | Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology | Sung, SK; Kim, DH; Sim, JS; Kim, Kyung Rok; Lee, YK; Lee, JD; Chae, SD; Kim, BM; Park, BG | ARTICLE | 751 |
