| 2002-10 | A new 50-nm nMOSFET with side-gates for virtual source-drain extensions | Choi, YJ; Choi, BY; Kim, Kyung Rok; Lee, JD; Park, BG | ARTICLE | 649 |
| 2002-12 | A practical SPICE model based on the physics and characteristics of realistic single-electron transistors | Lee, SH; Kim, DH; Kim, Kyung Rok; Lee, JD; Park, BG; Gu, YJ; Yang, GY; Kong, JT | ARTICLE | 598 |
| 2004-01 | A SPICE model of realistic single-electron transistors and its application to multiple-valued logic | Song, KW; Kim, Kyung Rok; Lee, JD; Park, BG; Lee, SH; Kim, DH | ARTICLE | 564 |
| 2006-05 | Analytical modeling of field-induced interband tunneling-effect transistors and its application | Song, SH; Kim, Kyung Rok; Kang, SW; Kim, JH; Huh, JI; Kang, KC; Song, KW; Lee, JD; Park, BG | ARTICLE | 580 |
| 2004-04 | Analytical modeling of realistic single-electron transistors based on metal-oxide-semiconductor structure with a unique distribution function
in the Coulomb-Blockade oscillation region | Kim, Kyung Rok; Song, KW; Kim, DH; Baek, G; Kim, HH; Huh, JI; Lee, JD; Park, BG | ARTICLE | 562 |
| 2001-01 | Application of synthetic polyamine flocculants for dye wastewater treatment | Choi, JH; Shin, WS; Lee, SH; Joo, DJ; Lee, JD; Choi, SJ; Park, LS | ARTICLE | 592 |
| 2002-01 | Characteristics of silicon-on-insulator single-electron transistors with electrically induced tunnel barriers | Kim, Kyung Rok; Kim, DH; Lee, JD; Park, BG | ARTICLE | 524 |
| 2005-04 | Complementary self-biased logics based on single-electron transistor (SET)/CMOS hybrid process | Song, KW; Lee, YK; Sim, JS; Kim, Kyung Rok; Lee, JD; Park, BG; You, YS; Park, JO; Jin, YS; Kim, YW | ARTICLE | 551 |
| 2004-04 | Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor | Kim, Kyung Rok; Kim, DH; Lee, JD; Park, BG | ARTICLE | 626 |
| 2002-05 | Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor | Kim, DH; Kim, Kyung Rok; Sung, SK; Lee, JD; Park, BG | ARTICLE | 661 |
| 2002-07 | Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire | Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG | ARTICLE | 570 |
| 2005-05 | Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance | Kim, Kyung Rok; Kim, HH; Song, KW; Huh, JI; Lee, JD; Park, BG | ARTICLE | 598 |
| 2002-10 | Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately
doped body | Kim, Kyung Rok; Kim, DH; Sung, SK; Lee, JD; Park, BG | ARTICLE | 550 |
| 2002-04 | Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic | Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D | ARTICLE | 522 |
| 2004-06 | Silicon-based field-induced band-to-band tunneling effect transistor | Kim, Kyung Rok; Kim, DH; Song, KW; Baek, G; Kim, HH; Huh, JI; Lee, JD; Park, BG | ARTICLE | 620 |
| 2002-04 | Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology | Sung, SK; Kim, DH; Sim, JS; Kim, Kyung Rok; Lee, YK; Lee, JD; Chae, SD; Kim, BM; Park, BG | ARTICLE | 506 |
| 2001-12 | Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method | Kim, DH; Sung, SK; Sim, JS; Kim, Kyung Rok; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D | ARTICLE | 524 |
| 2002-12 | Single-electron transistors based on gate-induced Si island for single-electron logic application | Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG | ARTICLE | 554 |
| 2003-09 | Single-electron transistors fabricated with sidewall spacer patterning | Park, BG; Kim, DH; Kim, Kyung Rok; Song, KW; Lee, JD | ARTICLE | 503 |
| 2002-04 | Single-electron transistors with sidewall depletion gates on a silicon-on-insulator nano-wire | Kim, Kyung Rok; Kim, DH; Sung, SK; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D | ARTICLE | 462 |
