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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Single-electron transistors with sidewall depletion gates on an SOI nanowire and their application to single-electron inverters

Author(s)
Kim, DHSung, SKKim, Kyung RokLee, JDPark, BGChoi, BHHwang, SWAhn, D
Issued Date
2002-10
URI
https://scholarworks.unist.ac.kr/handle/201301/7935
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035981425
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.4, pp.505 - 508
Abstract
Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire are proposed and were fabricated using a combination of conventional lithography and process technology. The island-size dependence of the electrical characteristics showed good controllability. Based on the high-voltage gain and the Coulomb oscillation peak position control by the sidewall gate voltage, the basic operation of a single-electron inverter was demonstrated at 12.5 K.
Publisher
KOREAN PHYSICAL SOC
ISSN
0374-4884

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