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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Single-electron transistors with sidewall depletion gates on an SOI nanowire and their application to single-electron inverters

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Title
Single-electron transistors with sidewall depletion gates on an SOI nanowire and their application to single-electron inverters
Author
Kim, DHSung, SKKim, Kyung RokLee, JDPark, BGChoi, BHHwang, SWAhn, D
Keywords
Depletion gate;  Nanowire;  Sidewall;  Silicon-on-insuator;  Single-electron inverter
Issue Date
2002-10
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.4, pp.505 - 508
Abstract
Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire are proposed and were fabricated using a combination of conventional lithography and process technology. The island-size dependence of the electrical characteristics showed good controllability. Based on the high-voltage gain and the Coulomb oscillation peak position control by the sidewall gate voltage, the basic operation of a single-electron inverter was demonstrated at 12.5 K.
URI
https://scholarworks.unist.ac.kr/handle/201301/7935
ISSN
0374-4884
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EE_Journal Papers
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