Single-electron transistors with sidewall depletion gates on an SOI nanowire and their application to single-electron inverters
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- Title
- Single-electron transistors with sidewall depletion gates on an SOI nanowire and their application to single-electron inverters
- Author
- Kim, DH; Sung, SK; Kim, Kyung Rok; Lee, JD; Park, BG; Choi, BH; Hwang, SW; Ahn, D
- Keywords
- Depletion gate; Nanowire; Sidewall; Silicon-on-insuator; Single-electron inverter
- Issue Date
- 2002-10
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.4, pp.505 - 508
- Abstract
- Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire are proposed and were fabricated using a combination of conventional lithography and process technology. The island-size dependence of the electrical characteristics showed good controllability. Based on the high-voltage gain and the Coulomb oscillation peak position control by the sidewall gate voltage, the basic operation of a single-electron inverter was demonstrated at 12.5 K.
- URI
- https://scholarworks.unist.ac.kr/handle/201301/7935
- ISSN
- 0374-4884
- Appears in Collections:
- EE_Journal Papers
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