JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.4, pp.505 - 508
Abstract
Single-electron transistors with sidewall depletion gates on a silicon-On-insulator (SOI) nanowire are proposed and were fabricated using a combination of conventional lithography and process technology. The island-size dependence of the electrical characteristics showed good controllability. Based on the high-voltage gain and the Coulomb oscillation peak position control by the sidewall gate voltage, the basic operation of a single-electron inverter was demonstrated at 12.5 K.