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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Analytical modeling of field-induced interband tunneling-effect transistors and its application

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Title
Analytical modeling of field-induced interband tunneling-effect transistors and its application
Author
Song, SHKim, Kyung RokKang, SWKim, JHHuh, JIKang, KCSong, KWLee, JDPark, BG
Keywords
Analytical model; Field-induced interband tunneling-effect transistor (FITET); Interband tunneling; Multivalued logic; Negative-differential conductance (NDC); Negative-differential transconductance (NDT); Parity checker; XOR
Issue Date
2006-05
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.5, no.3, pp.192 - 200
Abstract
In the room-temperature I-V characteristics of field-induced interband tunneling-effect transistors (FITETs), negative-differential conductance (NDC) characteristics as well as negative-differential transconductance (NDT) characteristics have been observed. The key operation principle of this quantum-tunneling device is the field-induced interband tunneling. To include the effect of interband tunneling, we have developed an analytical equation of interband tunneling current. Due to the inherent SOI-MOSFET structure of the FITET, the current equation of MOSFET has also been included in the analytical equation of the FITET. By comparing the calculated data from these two current components with the measured data, an additional excess tunneling current component has been introduced in the final analytical equation of the FITET. SPICE simulation results with this analytical model have shown good agreements with the experimental results. Also, this analytical model has been applied to verify the functionality of a simple digital logic gate such as XOR and four-level parity checker made by one FITET.
URI
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DOI
10.1109/TNANO.2006.869950
ISSN
1536-125X
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EE_Journal Papers
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