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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology

Author(s)
Sung, SKKim, DHSim, JSKim, Kyung RokLee, YKLee, JDChae, SDKim, BMPark, BG
Issued Date
2002-04
DOI
10.1143/JJAP.41.2606
URI
https://scholarworks.unist.ac.kr/handle/201301/7945
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=3042734594
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.4B, pp.2606 - 2610
Abstract
The room temperature-operation of a single-electron metal-oxide- semiconductor (MOS) memory with a defined quantum dot fabricated by sidewall patterning technique based on conventional VLSI technologies has been demonstrated without the aid of electron beam (EB) lithography for the first time. Sidewall patterning technique shows a good uniformity and controllability as well as high throughput. The fabricated memory devices show quantized threshold voltage shifts at room temperature. Time-dependant measurement of drain current shows discrete electron injection to the quantum dot. In addition, fabricated devices have good subthreshold swing and retention characteristics
Publisher
JAPAN SOC APPLIED PHYSICS
ISSN
0021-4922

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