BROWSE

Related Researcher

Author's Photo

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

ITEM VIEW & DOWNLOAD

Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology

Cited 4 times inthomson ciCited 4 times inthomson ci
Title
Single-electron MOS memory with a defined quantum dot based on conventional VLSI technology
Author
Sung, SKKim, DHSim, JSKim, Kyung RokLee, YKLee, JDChae, SDKim, BMPark, BG
Issue Date
2002-04
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.4B, pp.2606 - 2610
Abstract
The room temperature-operation of a single-electron metal-oxide- semiconductor (MOS) memory with a defined quantum dot fabricated by sidewall patterning technique based on conventional VLSI technologies has been demonstrated without the aid of electron beam (EB) lithography for the first time. Sidewall patterning technique shows a good uniformity and controllability as well as high throughput. The fabricated memory devices show quantized threshold voltage shifts at room temperature. Time-dependant measurement of drain current shows discrete electron injection to the quantum dot. In addition, fabricated devices have good subthreshold swing and retention characteristics
URI
https://scholarworks.unist.ac.kr/handle/201301/7945
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=3042734594
DOI
10.1143/JJAP.41.2606
ISSN
0021-4922
Appears in Collections:
EE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU