Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance
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- Field-induced interband tunneling effect transistor (FITET) with negative-differential transconductance and negative-differential conductance
- Kim, Kyung Rok; Kim, HH; Song, KW; Huh, JI; Lee, JD; Park, BG
- CMOS; Degenerate; Field-induced interband tunneling effect (FITET); Interband; Negative-differential conductance (NDC); Negative-differential transconductance (NDT); Quantum-tunneling; Silicon-on-insulator (SOI)
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.4, no.3, pp.317 - 321
- The fabricated quantum-tunneling devices have a structure totally compatible with silicon-on-insulator CMOS device except for degenerate channel doping and the intentional omission of lightly doped drain (LDD) region. The key principle of the device operation is the field-induced interband tunneling effect, and thus the name of this quantum-tunneling device: FITET. In the transfer I-Vcharacteristics of FITET, negative-differential transconductance (NDT) characteristics have been observed at room temperature. By controlling the critical device parameters to enhance field-effect such as gate oxide thickness, the peak-to-valley current ratio over 5 has been obtained at room temperature, and the negative-differential conductance (NDC) characteristics as well as NDT have been observed in the output I-V curves of the same FITET.
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