Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately
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- Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately
- Kim, Kyung Rok; Kim, DH; Sung, SK; Lee, JD; Park, BG
- Band-to-band tunneling; Degeneracy; Negative-differential transconductance; P-n tunnel junctions; Silicon-on-insulator (SOI) nMOSFETs
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE ELECTRON DEVICE LETTERS, v.23, no.10, pp.612 - 614
- Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I DS-V DS curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions.
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