BROWSE

Related Researcher

Author's Photo

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

ITEM VIEW & DOWNLOAD

Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body

Cited 8 times inthomson ciCited 11 times inthomson ci
Title
Negative-differential transconductance characteristics at room temperature in 30-nm square-channel SOI nMOSFETs with a degenerately doped body
Author
Kim, Kyung RokKim, DHSung, SKLee, JDPark, BG
Keywords
Band-to-band tunneling; Degeneracy; Negative-differential transconductance; P-n tunnel junctions; Silicon-on-insulator (SOI) nMOSFETs
Issue Date
2002-10
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.23, no.10, pp.612 - 614
Abstract
Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I DS-V DS curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions.
URI
Go to Link
DOI
10.1109/LED.2002.803769
ISSN
0741-3106
Appears in Collections:
EE_Journal Papers
Files in This Item:
2-s2.0-0036805861.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU