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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

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Title
Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor
Author
Kim, Kyung RokKim, DHLee, JDPark, BG
Keywords
SINGLE-ELECTRON TRANSISTORS; QUANTUM-WIRE; BLOCKADE; JUNCTIONS
Issue Date
2004-04
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.84, no.16, pp.3178 - 3180
Abstract
The Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect-transistors were discussed. It was found that the formation of tunnel barries and a quantum dot in a single-electron transistor structure originated from two p+ - p+ tunnel junctions and a p+ -doped channel with mesoscopic dimension, respectively. At liquid nitrogen temperature, the Coulomb-blockade oscillations with multiple peaks were also observed. Analysis shows that the single-electron charging effect based on band-to-band tunneling was confirmed using the electrical and thermal characterization of the quantum dots.
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DOI
10.1063/1.1707217
ISSN
0003-6951
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EE_Journal Papers
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