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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Characteristics of silicon-on-insulator single-electron transistors with electrically induced tunnel barriers

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Title
Characteristics of silicon-on-insulator single-electron transistors with electrically induced tunnel barriers
Author
Kim, Kyung RokKim, DHLee, JDPark, BG
Issue Date
2002-01
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.140 - 144
Abstract
Single-electron transistors with a side gate structure were fabricated on SOI (silicon-on-insulator) substrate. The silicon channel in which electrons could be transported was defined by electron-beam lithography, and the channel was wrapped by two side gates which could control the electrically induced tunnel barrier. The electrical characteristics of the fabricated device were measured at 4.2 K. The measured characteristics showed a larger current oscillation period and amplitude than those estimated from the structural parameters. Also, the current contour plot showed irregular Coulomb diamonds with different sizes. These characteristics are the result of multi-dot formation. A Monte-Carlo simulation verified that these multi-dot characteristics result from unintentional quantum dots due to the irregularity of electron-beam lithography.
URI
https://scholarworks.unist.ac.kr/handle/201301/7947
ISSN
0374-4884
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