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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Single-electron transistors based on gate-induced Si island for single-electron logic application

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Title
Single-electron transistors based on gate-induced Si island for single-electron logic application
Author
Kim, DHSung, SKKim, Kyung RokLee, JDPark, BG
Keywords
Binary decision diagram; Gate-induced island; Sidewall gate; Single-electron inverter; SOI
Issue Date
2002-12
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.1, no.4, pp.170 - 175
Abstract
The island size dependence of the capacitance components of single-electron transistors (SETs) based on gate-induced Si islands was extracted from the electrical characteristics. In the fabricated SETs, the sidewall gate tunes the electrically induced tunnel junctions, and controls the phase of the Coulomb oscillation. The capacitance between the sidewall gate and the Si island extracted from the Coulomb oscillation phase shift of the SETs with sidewall depletion gates on a silicon-on-insulator nanowire was independent of the Si island size, which is consistent with the device structure. The Coulomb oscillation phase shift of the fabricated SETs has the potential for a complementary operation. As a possible application to single-electron logic, the complementary single-electron inverter and binary decision diagram operation on the basis of the Coulomb oscillation phase shift and the tunable tunnel junctions were demonstrated.
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DOI
10.1109/TNANO.2002.807382
ISSN
1536-125X
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EE_Journal Papers
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