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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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Single-electron transistors based on gate-induced Si island for single-electron logic application

Author(s)
Kim, DHSung, SKKim, Kyung RokLee, JDPark, BG
Issued Date
2002-12
DOI
10.1109/TNANO.2002.807382
URI
https://scholarworks.unist.ac.kr/handle/201301/7934
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33646056038
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.1, no.4, pp.170 - 175
Abstract
The island size dependence of the capacitance components of single-electron transistors (SETs) based on gate-induced Si islands was extracted from the electrical characteristics. In the fabricated SETs, the sidewall gate tunes the electrically induced tunnel junctions, and controls the phase of the Coulomb oscillation. The capacitance between the sidewall gate and the Si island extracted from the Coulomb oscillation phase shift of the SETs with sidewall depletion gates on a silicon-on-insulator nanowire was independent of the Si island size, which is consistent with the device structure. The Coulomb oscillation phase shift of the fabricated SETs has the potential for a complementary operation. As a possible application to single-electron logic, the complementary single-electron inverter and binary decision diagram operation on the basis of the Coulomb oscillation phase shift and the tunable tunnel junctions were demonstrated.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
1536-125X

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