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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Analytical modeling of realistic single-electron transistors based on metal-oxide-semiconductor structure with a unique distribution function in the Coulomb-Blockade oscillation region

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Title
Analytical modeling of realistic single-electron transistors based on metal-oxide-semiconductor structure with a unique distribution function in the Coulomb-Blockade oscillation region
Author
Kim, Kyung RokSong, KWKim, DHBaek, GKim, HHHuh, JILee, JDPark, BG
Keywords
Band-to-band tunneling; Coulomb oscillation; Distribution function; MOSET; MOSFET; Quantum-dot; Single-electron transistors; SOI; SPICE
Issue Date
2004-04
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.43, no.4B, pp.2031 - 2035
Abstract
Novel metal-oxide-semiconductor (MOS)-based single-electron transistors (MOSETs) using band-to-band tunneling mechanism have been fabricated by the conventional silicon-on-insulator (SOI) MOSFET technologies. The fabricated SETs have tunnel barriers and quantum-dot formed by an extremely small channel between two p+-n+ tunnel junctions in the degenerately doped SOI MOSFET. Coulomb oscillation was observed in the subthreshold region at liquid nitrogen temperature and total capacitance of quantum-dot is 2.25 aF which is well matched to the device geometry. In order to validate the operation principle of our device, we have implemented an analytical device model in the simulation program with integrated circuit emphasis (SPICE). SPICE simulation of our model with a unique distribution function has reproduced the experimental results with good agreement for wide gate and drain bias range.
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DOI
10.1143/JJAP.43.20311
ISSN
0021-4922
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