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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Silicon-based field-induced band-to-band tunneling effect transistor

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Title
Silicon-based field-induced band-to-band tunneling effect transistor
Author
Kim, Kyung RokKim, DHSong, KWBaek, GKim, HHHuh, JILee, JDPark, BG
Keywords
Band-to-band tunneling; Degenerate; FIBTET; Negative differential transconductance; SOI MOSFET
Issue Date
2004-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.439 - 441
Abstract
This letter reports a silicon-based field-induced band-to-band tunneling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced band-to-band tunneling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunneling current can be controlled by the layout design of channel length and width.
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DOI
10.1109/LED.2004.829668
ISSN
0741-3106
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EE_Journal Papers
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