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Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

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Title
A practical SPICE model based on the physics and characteristics of realistic single-electron transistors
Author
Lee, SHKim, DHKim, Kyung RokLee, JDPark, BGGu, YJYang, GYKong, JT
Keywords
MOSFET; Realistic single-electron transistor; Single-electron inverter; SPICE model
Issue Date
2002-12
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.1, no.4, pp.226 - 232
Abstract
A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.
URI
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DOI
10.1109/TNANO.2002.807394
ISSN
1536-125X
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EE_Journal Papers
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