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Kim, Kyung Rok (김경록)

Department
Department of Electrical Engineering(전기전자공학과)
Website
http://needs.unist.ac.kr/
Lab
Nano-Electronic Emerging Devices Lab. (차세대 나노 전자 소자 연구실)
Research Keywords
테라헤르츠, Nano-CMOS, Neuromorphic Device, Multi-Value Logic, THz Plasma-Wave Transistor, PWT, Monolithic Transistor-Antenna, Trantenna, THz Imaging
Research Interests
Development of nano-electronic emerging devices (NEEDs) is main research focus to achieve ultra-low power peta-scale digital and RF applications in THz bandwidth. Our laboratory research about novel “beyond CMOS” devices as well as high-performance /low-power nano-CMOS for multi-valued logic and memory applications, neuromorphic devices, plasma wave transistor (PWT) THz emitter and detectors based on nano-scale structures using Si/Ge/C-based and III-V novel materials as well as nano-electronic circuit design.
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2020-09Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility TransistorKim, Sung-Ho; Park, Jong Yul; Chang, Jiwon, et alARTICLE30 Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor
2020-09A Logic Synthesis Methodology for Low-Power Ternary Logic CircuitsKim, Sunmean; Lee, Sung-Yun; Park, Sunghye, et alARTICLE15 A Logic Synthesis Methodology for Low-Power Ternary Logic Circuits
2020-04Monolithic Circular Transistor-Antenna Design for High-Performance Plasmonic Millimeter-Wave DetectorsPatel, Ramesh; Ryu, Min Woo; Choe, Mun Seok, et alARTICLE241 Monolithic Circular Transistor-Antenna Design for High-Performance Plasmonic Millimeter-Wave Detectors
2020-04A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memoryKim, Kwan-Ho; Park, Hyung-Youl; Shim, Jaewoo, et alARTICLE88 A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
2020-01Density-of-States-Based Physical Model for Ink-Jet Printed Thiophene Polymeric TFTsLee, Jiyoul; Jang, Jun Tae; Jang, Jaeman, et alARTICLE224 Density-of-States-Based Physical Model for Ink-Jet Printed Thiophene Polymeric TFTs
2019-07Tunnelling-based ternary metal–oxide–semiconductor technologyJeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et alARTICLE989 Tunnelling-based ternary metal–oxide–semiconductor technology
2019-04ZnO composite nanolayer with mobility edge quantization for multi-value logic transistorsLee, Lynn; Hwang, Jeongwoon; Jung, Jin Won, et alARTICLE247 ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
2018-11Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET DetectorKim, Suna; Khan, M. Ibrahim Wasiq; Park, Dae-Woong, et alARTICLE484 Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector
2018-10Ternary full adder using multi-threshold voltage graphene barristorsHeo, Sunwoo; Kim, Sunmean; Kim, Kiyung, et alARTICLE1262 Ternary full adder using multi-threshold voltage graphene barristors
2018-06Low Leakage III-V/Ge CMOS FinFET Design for High-Performance Logic Applications with High-kappa Spacer TechnologyJang, Esan; Shin, Sunhae; Jeong, Jae Won, et alARTICLE322 Low Leakage III-V/Ge CMOS FinFET Design for High-Performance Logic Applications with High-kappa Spacer Technology
2017-12Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal JunctionJeon, Youngeun; Jung, Sugnchul; Jin, Hanbyul, et alARTICLE569 Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction
2017-12LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule HeaterJeon, Chang-Hoon; Kim, Choong-Ki; Park, Jun-Young, et alARTICLE499 LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule Heater
2016-05Accurate Analysis and Characterization of Silicon Field Effect Transistor-Based Terahertz Wave Detector with Quasi-Plasma Two-Dimensional Electron GasKim, Kwan Sung; Ryu, Min Woo; Lee, Jeong Seop, et alARTICLE711 Accurate Analysis and Characterization of Silicon Field Effect Transistor-Based Terahertz Wave Detector with Quasi-Plasma Two-Dimensional Electron Gas
2016-05Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching CharacteristicsJeong, Jae Won; Jang, E-San; Shin, Sunhae, et alARTICLE1760 Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics
2016-04High-Performance Plasmonic THz Detector Based on Asymmetric FET with Vertically Integrated Antenna in CMOS TechnologyRyu, Min Woo; Lee, Jeong Seop; Kim, Kwan Sung, et alARTICLE940 High-Performance Plasmonic THz Detector Based on Asymmetric FET with Vertically Integrated Antenna in CMOS Technology
2016-03Novel five-state latch using double-peak negative differential resistance and standard ternary inverterShin, Sunhae; Kim, Kyung RokARTICLE634 Novel five-state latch using double-peak negative differential resistance and standard ternary inverter
2015-10Parasitic antenna effect in terahertz plasmon detector array for real-time imaging systemYang, Jong-Ryul; Lee, Woo-Jae; Ryu, Min Woo, et alARTICLE765 Parasitic antenna effect in terahertz plasmon detector array for real-time imaging system
2015-09실리콘 기반 플라즈마파 트랜지스터를 이용한 테라헤르츠 발진기 및 검출기류민우; 박종율; 김경록ARTICLE945
2015-08Compact Design of Low Power Standard Ternary Inverter Based on OFF-State Current Mechanism Using Nano-CMOS TechnologyShin, Sunhae; Jang, Esan; Jeong, Jae Won, et alARTICLE809 Compact Design of Low Power Standard Ternary Inverter Based on OFF-State Current Mechanism Using Nano-CMOS Technology
2015-06Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applicationsShin, Sunhae; Kim, Kyung RokARTICLE784 Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

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