| 2020-04 | Monolithic Circular Transistor-Antenna Design for High-Performance Plasmonic Millimeter-Wave Detectors | Patel, Ramesh; Ryu, Min Woo; Choe, Mun Seok, et al | ARTICLE | 153 |
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| 2020-04 | A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory | Kim, Kwan-Ho; Park, Hyung-Youl; Shim, Jaewoo, et al | ARTICLE | 31 |
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| 2020-01 | Density-of-States-Based Physical Model for Ink-Jet Printed Thiophene Polymeric TFTs | Lee, Jiyoul; Jang, Jun Tae; Jang, Jaeman, et al | ARTICLE | 160 |
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| 2019-07 | Tunnelling-based ternary metal–oxide–semiconductor technology | Jeong, Jae Won; Choi, Young Eun; Kim, Woo Seok, et al | ARTICLE | 782 |
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| 2019-04 | ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors | Lee, Lynn; Hwang, Jeongwoon; Jung, Jin Won, et al | ARTICLE | 203 |
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| 2018-11 | Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector | Kim, Suna; Khan, M. Ibrahim Wasiq; Park, Dae-Woong, et al | ARTICLE | 430 |
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| 2018-10 | Ternary full adder using multi-threshold voltage graphene barristors | Heo, Sunwoo; Kim, Sunmean; Kim, Kiyung, et al | ARTICLE | 1187 |
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| 2018-06 | Low Leakage III-V/Ge CMOS FinFET Design for High-Performance Logic Applications with High-kappa Spacer Technology | Jang, Esan; Shin, Sunhae; Jeong, Jae Won, et al | ARTICLE | 284 |
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| 2017-12 | Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction | Jeon, Youngeun; Jung, Sugnchul; Jin, Hanbyul, et al | ARTICLE | 515 |
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| 2017-12 | LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule Heater | Jeon, Chang-Hoon; Kim, Choong-Ki; Park, Jun-Young, et al | ARTICLE | 443 |
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| 2016-05 | Accurate Analysis and Characterization of Silicon Field Effect Transistor-Based Terahertz Wave Detector with Quasi-Plasma Two-Dimensional Electron Gas | Kim, Kwan Sung; Ryu, Min Woo; Lee, Jeong Seop, et al | ARTICLE | 652 |
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| 2016-05 | Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics | Jeong, Jae Won; Jang, E-San; Shin, Sunhae, et al | ARTICLE | 1683 |
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| 2016-04 | High-Performance Plasmonic THz Detector Based on Asymmetric FET with Vertically Integrated Antenna in CMOS Technology | Ryu, Min Woo; Lee, Jeong Seop; Kim, Kwan Sung, et al | ARTICLE | 894 |
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| 2016-03 | Novel five-state latch using double-peak negative differential resistance and standard ternary inverter | Shin, Sunhae; Kim, Kyung Rok | ARTICLE | 587 |
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| 2015-10 | Parasitic antenna effect in terahertz plasmon detector array for real-time imaging system | Yang, Jong-Ryul; Lee, Woo-Jae; Ryu, Min Woo, et al | ARTICLE | 707 |
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| 2015-09 | 실리콘 기반 플라즈마파 트랜지스터를 이용한 테라헤르츠 발진기 및 검출기 | 류민우; 박종율; 김경록 | ARTICLE | 897 |
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| 2015-08 | Compact Design of Low Power Standard Ternary Inverter Based on OFF-State Current Mechanism Using Nano-CMOS Technology | Shin, Sunhae; Jang, Esan; Jeong, Jae Won, et al | ARTICLE | 752 |
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| 2015-06 | Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications | Shin, Sunhae; Kim, Kyung Rok | ARTICLE | 734 |
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| 2015-06 | Extended design window of resonant plasma-wave transistor for terahertz emitter by considering degenerate carrier velocity model with Fermi-Dirac distribution | Park, Jong Yul; Kim, Sung-Ho; Kim, Kyung Rok | ARTICLE | 698 |
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| 2015-06 | Gate induced drain leakage reduction with analysis of gate fringing field effect on high-kappa/metal gate CMOS technology | Jang, Esan; Shin, Sunhae; Jung, Jae Won, et al | ARTICLE | 653 |
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