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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector
- Issued Date
- 2018-11
- Citation
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.8, no.6, pp.681 - 687
- Abstract
- This paper reports the effect of the source/drain junction area on the responsivity of a MOSFET-based THz detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source junction area than drain junction area. For experimental verification, three types of MOSFET detectors with different source/drain junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest drain junction area and the largest source junction area. IEEE
- Publisher
- Institute of Electrical and Electronics Engineers
- ISSN
- 2156-342X
- Keyword (Author)
- Junction area, noise-equivalent power (NEP), plasma-wave detection, responsivity, terahertz detector
- Keyword
- THZ DETECTOR, RADIATION, ANTENNA
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