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- Park, Kibog
- Emergent Materials & Devices Lab.
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High-Performance Plasmonic THz Detector Based on Asymmetric FET with Vertically Integrated Antenna in CMOS Technology
- Author(s)
- Ryu, Min Woo, Lee, Jeong Seop, Kim, Kwan Sung, Park, Kibog, Yang, Jong-Ryul, Han, Seong-Tae, Kim, Kyung Rok
- Issued Date
- 2016-04
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.4, pp.1742 - 1748
- Abstract
- We report a high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric field-effect transistor (FET) structure using 65-nm CMOS technology. By designing asymmetric FET on a self-aligned poly-Si gate structure, more enhanced channel charge asymmetry between source and drain has been obtained in comparison with non-self-aligned metal gate structure of our previous work. In addition, using vertically-integrated patch antenna, which is designed for 0.2 THz resonance frequency, we demonstrated the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz0.5 at 0.2 THz.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0018-9383
- Keyword (Author)
- Asymmetric FET, CMOS, noise-equivalent power (NEP), plasmonic terahertz (THz) detector, responsivity, self-aligned
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