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Showing results 1 to 16 of 16

Issue DateTitleAuthor(s)TypeView
2007-01A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operationKang, Sangbeom; Cho, Woo Yeong; Cho, Beak-Hyung; Lee, Kwang-Jin; Lee, Chang-Soo; Oh, Hyung-Rok; Choi, Byung-Gil; Wang, Qi; Kim, Hye-Jin; Park, Mu-Hui; Ro, Yn Hwan; Kim, Suyeon; Ha, Choong-Duk; Kim, Ki-Sung; Kim, Young-Ran; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Jeong, Gitae; Jeong, Hongsik; Kim, Kinam; Shin, YunSuengARTICLE89
2005-01A 0.18-mu m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)Cho, Woo Yeong; Cho, Beak-Hyung; Choi, Byung-Gil; Oh, Hyung-Rok; Kang, Sangbeom; Kim, Ki-Sung; Kim, Kyung-Hee; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Hwang, Youngnam; Ahn, S.; Koh, Gwan-Hyeob; Jeong, Gitae; Jeong, Hongsik; Kim, KinamARTICLE97
2012-02-22A 1920x1080 3.65μm-Pixel 2D/3D Image Sensor with Split and Binning Pixel Structure in 0.11μm Standard CMOSKim, Seong-Jin; Kang, Byongmin; Kim, James D. K.; Lee, Keechang; Kim, Chang-Yeong; Kim, KinamCONFERENCE7
1999-11A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAMYoon, Hongil; Cha, Gi-Won; Yoo, Changsik; Kim, Nam-Jong; Kim, Keum-Yong; Lee, Chang Ho; Lim, Kyu-Nam; Lee, Kyuchan; Jeon, Jun-Young; Jung, Tae Sung; Jeong, Hongsik; Chung, Tae-Young; Kim, Kinam; Cho, Soo InARTICLE96
2000-07A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyondHa, Daewon; Shin, Dongwon; Koh, Gwan-Hyeob; Lee, Jaegu; Lee, Sanghyeon; Ahn, Yong-Seok; Jeong, Hongsik; Chung, Taeyoung; Kim, KinamARTICLE86
2007-04Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transitionKim, YoungKuk; Jeong, K.; Cho, M.-H.; Hwang, Uk; Jeong, H. S.; Kim, KinamARTICLE93
2006-01Enhanced write performance of a 64-Mb phase-change random access memoryOh, Hyung-rok; Cho, Beak-hyung; Cho, Woo Yeong; Kang, Sangbeom; Choi, Byung-gil; Kim, Hye-jin; Kim, Ki-sung; Kim, Du-eung; Kwak, Choong-keun; Byun, Hyun-geun; Jeong, Gi-tae; Jeong, Hong-sik; Kim, KinamARTICLE91
2005-04Ge(2)Sb(2)Te(5) confined structures and integration of 64Mb phase-change random access memoryYeung, Fai; Ahn, Su-Jin; Hwang, Young-Nam; Jeong, Chang-Wook; Song, Yoon-Jong; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jae-Hyun; Shin, Jae-Min; Jeong, Won-Cheol; Kim, Young-Tae; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, KinamARTICLE82
2006-04Highly reliable ring-type contact for high-density phase change memoryJeong, Chang-Wook; Ahn, Su-Jin; Hwang, Young-Nam; Song, Yoon-Jong; Oh, Jac-Hee; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jong-Hyun; Park, Jae-Hyun; Shin, Jac-Min; Yeung, Fai; Jeong, Won-Cheol; Kim, Jeong-In; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, KinamARTICLE76
2012-12Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibresPark, Minwoo; Im, Jungkyun; Shin, Minkwan; Min, Yuho; Park, Jaeyoon; Cho, Heesook; Park, Soojin; Shim, Mun-Bo; Jeon, Sanghun; Chung, Dae-Young; Bae, Jihyun; Park, Jongjin; Jeong, Unyong; Kim, KinamARTICLE1128
2002-10Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design RuleLee, Jaegoo; Lee, Juyong; Lee, Jaekyu; Kwak, Donghwa; Jeong, Gitae; Chung, Taeyoung; Cho, Changhyun; Kim, Minsang; Shin, Sooho; Koh, Kwanhyeob; Jeong, Hongsik; Kim, KinamARTICLE78
2007-01Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memoryPark, Jong-Bong; Park, Gyeong-Su; Baik, Hion-Suck; Lee, Jang-Ho; Jeong, Hongsik; Kim, KinamARTICLE96
2007-04Ring contact electrode process for high density phase change random access memoryRyoo, Kyung-Chang; Song, Yoon Jong; Shin, Jae-Min; Park, Sang-Su; Lim, Dong-Won; Kim, Jae-Hyun; Park, Woon-Ik; Sim, Ku-Ri; Jeong, Ji-Hyun; Kang, Dae-Hwan; Kong, Jun-Hyuck; Jeong, Chang-Wook; Oh, Jae-Hee; Park, Jae-Hyun; Kim, Jeong-In; Oh, Yong-Tae; Kim, Ji-Sun; Eun, Seong-Ho; Lee, Kwang-Woo; Koh, Seong-Pil; Fai, Yung; Koh, Gwan-Hyob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, KinamARTICLE102
2005-04Robust three-metallization back end of line process for 0.18 mu m embedded ferroelectric random access memoryKang, Seung-Kuk; Rhie, Hyoung-Seub; Kim, Hyun-Ho; Koo, Bon-Jae; Joo, Heung-Jin; Park, Jung-Hun; Kang, Young-Min; Choi, Do-Hyun; Lee, Sung-Young; Jeong, Hong-Sik; Kim, KinamARTICLE87
2007-04Robust two-dimensional stack capacitor technologies for 64 Mbit one-transistor-one-capacitor ferroelectric random access memoryJung, Ju-Young; Joo, Heung-Jin; Park, Jung-Hoon; Kang, Seuno-Kuk; Kim, Hwi-San; Choi, Do-Yeon; Kim, Jai-Hyun; Lee, Eun-Sun; Hong, Young-Ki; Kim, Hyun-Ho; Jung, Dong-Jin; Kang, Young-Min; Lee, Sung-Yung; Jeong, Hong-Sik; Kim, KinamARTICLE95
2008-04Writing current reduction and total set resistance analysis in PRAMJeong, C. W.; Kang, D. H.; Ha, D. W.; Song, Y. J.; Oh, J. H.; Kong, J. H.; Yoo, J. H.; Park, J. H.; Ryoo, K. C.; Lim, D. W.; Park, S. S.; Kim, J. I.; Oh, Y. T.; Kim, J. S.; Shin, J. M.; Park, Jaehyun; Fai, Y.; Koh, G. H.; Jeong, G. T.; Jeong, H. S.; Kim, KinamARTICLE105
Showing results 1 to 16 of 16

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