File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Hongsik
- Future Semiconductor Technology Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Robust two-dimensional stack capacitor technologies for 64 Mbit one-transistor-one-capacitor ferroelectric random access memory
- Author(s)
- Jung, Ju-Young, Joo, Heung-Jin, Park, Jung-Hoon, Kang, Seuno-Kuk, Kim, Hwi-San, Choi, Do-Yeon, Kim, Jai-Hyun, Lee, Eun-Sun, Hong, Young-Ki, Kim, Hyun-Ho, Jung, Dong-Jin, Kang, Young-Min, Lee, Sung-Yung, Jeong, Hong-Sik, Kim, Kinam
- Issued Date
- 2007-04
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, no.4B, pp.1934 - 1937
- Abstract
- It is very important to develop capacitor module technologies such as robust Pb(ZrxTi1-x)O-3 (PZT) film technology at nm scaled PZT thickness and damage minimized ferroelectric capacitor etching technology are crucial for the success of high density one-transistor-one-capacitor (1T1C) ferroelectric random access memory (FRAM). We resolved this issue from the change of the capacitor etching system and optimization of the PZT/SrRuO3 (SRO) deposition process. As a result, we realized a highly reliable sensing window for 64 Mbit 1T1C FRAM that were realized by novel technologies such as robust MOCVD PZT deposition technologies, optimized SRO electrode and damage minimized ferroelectric capacitor etching technologies.
- Publisher
- IOP PUBLISHING LTD
- ISSN
- 0021-4922
- Keyword (Author)
- FRAM, 64Mbit, 1T1C, ferroelectric, PZT
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.