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- Jeong, Changwook
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Process technologies for the integration of high density phase change RAM
- Author(s)
- Jeong, G. T., Hwang, Y. N., Lee, S. H., Lee, S. Y., Ryoo, K. C., Park, J. H., Song, Y. J., Ahn, S. J., Jeong, Changwook, Kim, Y. T., Horii, H., Ha, Y. H., Koh, G. H., Jeong, H. S., Kim, Kinam
- Issued Date
- 2005-05-09
- Citation
- ICICDT, pp.19 - 22
- Abstract
- Phase Change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write / read speed and reliability. The process technologies for the integration of high density PRAM will be reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current will be reviewed and other key factors for the high density PRAM are discussed. © 2005 IEEE.
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
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