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- Jeong, Changwook
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Full integration of highly reliable phase change memory with advanced ring type bottom electrode contact
- Author(s)
- Shin, J. M., Song, Y. J., Kang, D. W., Jeong, Changwook, Ryoo, K. C., Park, J. H., Oh, J. H., Kong, J. H., Jae, Park, Fai, Y., Oh, Y. T., Kim, J. I., Lim, D. W., Park, S., Kim, J. H., Kim, J. S., Kim, Y. T., Koh, G. H., Jeong, G. T., Jeong, H. S., Kim, Kinam
- Issued Date
- 2007-05
- Citation
- INTEGRATED FERROELECTRICS, v.90, pp.88
- Abstract
- We successfully developed 256Mb Phase Change Random Access Memory (PRAM) based on 0.10 mu m-CMOS technologies using ring type contact. The writing current with uniform CD process variation of Bottom Electrode Contact (BEC) was achieved by improving CMP process and developing core dielectric material. Also, the ring type contact scheme provided strong reliability such as the cycling endurance and data retention time for 256 Mb high density PRAM.
- Publisher
- TAYLOR & FRANCIS LTD
- ISSN
- 1058-4587
- Keyword (Author)
- PRAM, chalcogenide, ring shape contact, reset current
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