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정창욱

Jeong, Changwook
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Integration technologies for scalable high density MRAM

Author(s)
Park, J. H.Jeong, W. C.Oh, J. H.Jeong, ChangwookShin, J. M.Hwang, Y. N.Ahn, S. J.Lee, S. H.Lee, S. Y.Ryoo, K. C.Park, JonghyunYang, F.Koh, G. H.Jeong, G. T.Jeong, H. S.Kim, Kinam
Issued Date
2005-04-25
DOI
10.1109/VTSA.2005.1497074
URI
https://scholarworks.unist.ac.kr/handle/201301/58539
Citation
International Symposium on VLSI Technology, pp.39 - 40
Abstract
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size. We demonstrate these problems and suggest several solutions for realizing high density MRAM. © 2005 IEEE.
Publisher
IEEE

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