IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, no.1, pp.210 - 218
Abstract
A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal x 2 write and can be increased to similar to 2.67 MB/s with x 16 write. Endurance and retention characteristics are measured to be 10(7) cycles and ten years at 99 degrees C.