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정홍식

Jeong, Hongsik
Future Semiconductor Technology Lab.
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A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

Author(s)
Kang, SangbeomCho, Woo YeongCho, Beak-HyungLee, Kwang-JinLee, Chang-SooOh, Hyung-RokChoi, Byung-GilWang, QiKim, Hye-JinPark, Mu-HuiRo, Yn HwanKim, SuyeonHa, Choong-DukKim, Ki-SungKim, Young-RanKim, Du-EungKwak, Choong-KeunByun, Hyun-GeunJeong, GitaeJeong, HongsikKim, KinamShin, YunSueng
Issued Date
2007-01
DOI
10.1109/JSSC.2006.888349
URI
https://scholarworks.unist.ac.kr/handle/201301/27155
Fulltext
https://ieeexplore.ieee.org/document/4039587
Citation
IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, no.1, pp.210 - 218
Abstract
A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal x 2 write and can be increased to similar to 2.67 MB/s with x 16 write. Endurance and retention characteristics are measured to be 10(7) cycles and ten years at 99 degrees C.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
0018-9200
Keyword (Author)
endurancephase-change memoryphase-change random access memory (PRAM)resetretentionburst-readcharge pump

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