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Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy File

Choi, Kyoung Jin , Jang, HW , Lee, JL

Article Issue Date2002-12 View8
Effect of microstructural change on magnetic property of Mn-implanted p-type GaN File

Baik, Jeong Min , Jang, HW , Kim, JK , Lee, JL

Article Issue Date2003-01 View3
Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor File

Choi, Kyoung Jin , Jeon, CM , Jang, HW , Lee, JL

Article Issue Date2002-07 View7
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact File

Jeon, CM , Jang, HW , Choi, Kyoung Jin , Bae, SB , Lee, JH , Lee, JL

Article Issue Date2002-05 View9
Incorporation of oxygen donors in AlGaN File

Jang, HW , Baik, Jeong Min , Lee, MK , Shin, HJ , Lee, JL

Article Issue Date2004 View9
Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions File

Baik, Jeong Min , Kim, JK , Jang, HW , Shon, Y , Kang, TW , Lee, JL

Article Issue Date2002-12 View9
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy File

Choi, Kyoung Jin , Jang, HW , Lee, JL

Article Issue Date2003-02 View8
Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma File

Jeon, CM , Jang, HW , Choi, Kyoung Jin , Bae, SB , Lee, JH , Lee, JL

Article Issue Date2002-07 View8
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