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Showing results 1 to 12 of 12

Issue DateTitleAuthor(s)TypeView
2013-05A high resolution and high linearity 45 nm CMOS fully digital voltage sensor for low power applicationsRyu, Myunghwan; Kim, YoungminARTICLE866
2012-02A novel methodology for speeding up IC performance in 32nm FinFETNguyen, Hung Viet; Ryu, Myunghwan; Kim, YoungminARTICLE801
2014-11-05Analysis of Structural Variation and Threshold Voltage Modulation in 10-nm Double Gate-All-Around (DGAA) TransistorRyu, Myunghwan; Kim, YoungminCONFERENCE108
2014-12Comprehensive Performance Analysis of Interconnect Variation by double and triple patterning lithography processesKim, Youngmin; Lee, Jaemin; Ryu, MyunghwanARTICLE751
2011-11Diffusion-rounded CMOS for improving both I-on and I-off characteristicsRyu, Myunghwan; Nguyen, Hung Viet; Kim, YoungminARTICLE818
2015-08Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of CircuitsRyu, Myunghwan; Kim, YoungminARTICLE650
2015-06On-chip interconnect boosting technique by using of 10-nm double gate-all-around (DGAA) transistorLee, Jaemin; Ryu, Myunghwan; Kim, YoungminARTICLE654
2016-01Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel widthRyu, Myunghwan; Bien, Franklin; Kim, YoungminARTICLE906
2016-08Process-induced Structural Variability-aware Performance Optimization for Advanced Nanoscale TechnologiesBien, Franklin; Ryu, MyunghwanDoctoral Thesis865
2015-09-09Sandwiched-Gate Inverter: Novel Device Structure for Future Logic GatesRyu, Myunghwan; Bien, Franklin; Kim, YoungminCONFERENCE98
2013-05Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shapeRyu, Myunghwan; Kim, YoungminARTICLE828
2012-12TSV Geometrical Variations and Optimization Metric with Repeaters for 3D ICNguyen, Hung Viet; Ryu, Myunghwan; Kim, YoungminARTICLE824
Showing results 1 to 12 of 12

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