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Sandwiched-Gate Inverter: Novel Device Structure for Future Logic Gates
- Author(s)
- Ryu, Myunghwan, Bien, Franklin, Kim, Youngmin
- Issued Date
- 2015-09-09
- Citation
- International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.442 - 445
- Abstract
- In this paper, we propose a novel sandwiched-gate inverter by using of an NMOS GAA together with a donut-type PMOS. The DC operation and the transient performance of the proposed inverter were investigated with 3D TCAD simulations. The proposed inverter exhibits a correct inverter operation with a high noise margin and speed.
- Publisher
- IEEE
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