사진

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Kwon, Soon-Yong (권순용)

Department
Graduate School of Semiconductor Materials and Devices Engineering(반도체 소재ㆍ부품 대학원)
Website
http://sykwon.blogspot.kr/
Lab
Frontier, Innovative Nanomaterials & Devices Lab. (FIND 연구실)
Research Keywords
에피택시, 나노 코팅, 박막 공학, 표면 과학, Semiconductor Epitaxy, Nanocoating, Thin Film Technology, Surface/Interface Science
Research Interests
FIND (Frontier, Innovative Nanomaterials & Devices) leads in the design and synthesis of frontier low-dimensional (0D, 1D, 2D) nanomaterials with atomic-level controllability to make innovative appplications possible
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2005-10Electroreflectance and photoluminescence study of InNYoon, JW; Kim, SS; Cheong, H, et alARTICLE1024 Electroreflectance and photoluminescence study of InN
2005-07Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopyKim, EK; Kim, JS; Kwon, Soon-Yong, et alARTICLE1008 Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
2005-06Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical propertiesKwon, Soon-Yong; Kim, HJ; Na, H, et alARTICLE1046
2005-05Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wellsKwon, Soon-Yong; Baik, SI; Kim, YW, et alARTICLE1097 Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells
2004-12Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clustersSun, YP; Cho, YH; Kim, HM, et alARTICLE870
2004-12Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional gradingKwon, Soon-Yong; Cho, MH; Moon, P, et alARTICLE1118 Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading
2004-09The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor depositionNa, H; Kim, HJ; Kwon, Soon-Yong, et alARTICLE1019 The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition
2004-08Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong, et alARTICLE996 Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
2003-06Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic propertiesKim, HJ; Kwon, Soon-Yong; Yim, S, et alARTICLE1140 Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties
2003-05Effect of growth interruption on In-rich InGaN/GaN single quantum well structuresKwon, Soon-Yong; Kim, HJ; Na, H, et alARTICLE1067 Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
2003The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong, et alARTICLE1130 The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition
2002Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammoniaKwon, Soon-Yong; Kim, HJ; Kee, B, et alARTICLE1117 Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammonia
2000-12In-situ, real-time spectral reflectance monitoring of GaN growthNa, H; Kim, HJ; Kwon, Soon-Yong, et alARTICLE1037

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