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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Interface-Driven Partial Dislocation Formation in 2D Heterostructures

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Title
Interface-Driven Partial Dislocation Formation in 2D Heterostructures
Author
Kim, Jung HwaKim, Se-YangCho, YeonchooPark, Hyo JuShin, Hyeon-JinKwon, Soon-YongLee, Zonghoon
Issue Date
2019-04
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.31, no.15, pp.1807486
Abstract
Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface-driven stacking boundaries in WS2 using epitaxially grown tungsten disulfide (WS2) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS2 epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation-driven in-plane strain facilitates out-of-plane buckling with a height of 1 nm to release in-plane strain. Remarkably, in-plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS2 due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control.
URI
https://scholarworks.unist.ac.kr/handle/201301/26735
URL
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201807486
DOI
10.1002/adma.201807486
ISSN
0935-9648
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