Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects
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- Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects
- Song, Seunguk; Kim, Se-Yang; Kwak, Jinsung; Jo, Yongsu; Kim, Jung Hwa; Lee, Jong Hwa; Lee, Jae-Ung; Kim, Jong Uk; Yun, Hyung Duk; Sim, Yeoseon; Wang, Jaewon; Lee, Do Hee; Seok, Shi-Hyun; Kim, Tae-il; Cheong, Hyeonsik; Lee, Zonghoon; Kwon, Soon-Yong
- Issue Date
- ADVANCED SCIENCE, v.6, no.3, pp.1801370
- As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching approximate to 100 MA cm(-2), remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (approximate to 16.4 W cm(-1)) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics.
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