BROWSE

Related Researcher

Author's Photo

Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

ITEM VIEW & DOWNLOAD

Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Electrically Robust Single-Crystalline WTe2 Nanobelts for Nanoscale Electrical Interconnects
Author
Song, SeungukKim, Se-YangKwak, JinsungJo, YongsuKim, Jung HwaLee, Jong HwaLee, Jae-UngKim, Jong UkYun, Hyung DukSim, YeoseonWang, JaewonLee, Do HeeSeok, Shi-HyunKim, Tae-ilCheong, HyeonsikLee, ZonghoonKwon, Soon-Yong
Issue Date
2019-02
Publisher
WILEY
Citation
ADVANCED SCIENCE, v.6, no.3, pp.1801370
Abstract
As the elements of integrated circuits are downsized to the nanoscale, the current Cu-based interconnects are facing limitations due to increased resistivity and decreased current-carrying capacity because of scaling. Here, the bottom-up synthesis of single-crystalline WTe2 nanobelts and low- and high-field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top-down approach, the bottom-up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High-field electrical measurements and self-heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching approximate to 100 MA cm(-2), remarkably higher than those of conventional metals and other transition-metal chalcogenides, and sustain the highest electrical power per channel length (approximate to 16.4 W cm(-1)) among the interconnect candidates. The results suggest superior robustness of WTe2 against high-bias sweep and its possible applicability in future nanoelectronics.
URI
https://scholarworks.unist.ac.kr/handle/201301/25477
URL
https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201801370
DOI
10.1002/advs.201801370
ISSN
2198-3844
Appears in Collections:
MSE_Journal Papers
Files in This Item:
Song_et_al-2018-Advanced_Science.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU