Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes
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- Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes
- Song, Seunguk; Yoon, Aram; Jang, Sora; Lynch, Jason; Yang, Jihoon; Han, Juwon; Choe, Myeonggi; Jin, Young Ho; Chen, Cindy Yueli; Cheon, Yeryun; Kwak, Jinsung; Jeong, Changwook; Cheong, Hyeonsik; Jariwala, Deep; Lee, Zonghoon; Kwon, Soon-Yong
- Issue Date
- NATURE PORTFOLIO
- NATURE COMMUNICATIONS, v.14, no.1, pp.4747
- High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2Dsemiconductors and a suitablemetallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T'-phase semimetal contact electrodes. By transforming polycrystalline 1T'-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled singlecrystalline arrays at a low temperature (similar to 500 degrees C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T' semimetals and 2H semiconductors. Work function modulation of 1T'-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (similar to 0.7 k Omega.mu m) and near-zero Schottky barrier height (similar to 14meV) of the junction interface, and leading to high on-state current (similar to 7.8 mu A/mu m) and on/off current ratio (similar to 105) in the 2H-MoTe2 transistors.
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