Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit
Cited 0 times inCited 0 times in
- Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit
- Song, Seunguk; Sim, Yeoseon; Kim, Se-Yang; Hwa, Jung; Oh, Inseon; Na, Woongki; Lee, Do Hee; Wang, Jaewon; Yan, Shili; Liu, Yinan; Kwak, Jinsung; Chen, Jian-Hao; Cheong, Hyeonsik; Yoo, Jung-Woo; Lee, Zonghoon; Kwon, Soon-Yong
- Issue Date
- NATURE PUBLISHING GROUP
- NATURE ELECTRONICS, v.3, pp.207 - 215
- A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal-semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal-semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky-Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal-semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.