BROWSE

Related Researcher

Author's Photo

Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

ITEM VIEW & DOWNLOAD

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit
Author
Song, SeungukSim, YeoseonKim, Se-YangHwa, JungOh, InseonNa, WoongkiLee, Do HeeWang, JaewonYan, ShiliLiu, YinanKwak, JinsungChen, Jian-HaoCheong, HyeonsikYoo, Jung-WooLee, ZonghoonKwon, Soon-Yong
Issue Date
2020-04
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE ELECTRONICS, v.3, pp.207 - 215
Abstract
A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal-semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal-semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky-Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal-semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.
URI
https://scholarworks.unist.ac.kr/handle/201301/32015
URL
https://www.nature.com/articles/s41928-020-0396-x
DOI
10.1038/s41928-020-0396-x
ISSN
2520-1131
Appears in Collections:
MSE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU