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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)TypeView
2003-05Effect of growth interruption on In-rich InGaN/GaN single quantum well structuresKwon, Soon-Yong; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Sun, YP; Cho, YH; Yoon, EARTICLE469
2003-06Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic propertiesKim, HJ; Kwon, Soon-Yong; Yim, S; Na, H; Kee, B; Yoon, E; Kim, J; Park, SH; Jeon, H; Kim, S; Seo, JH; Park, K; Seon, MS; Sone, C; Nam, OH; Park, YARTICLE513
2004-08Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, DH; Oh, HJ; Yoon, S; Sone, C; Park, Y; Yoon, EARTICLE418
2004-09The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor depositionNa, H; Kim, HJ; Kwon, Soon-Yong; Sone, C; Park, Y; Yoon, EARTICLE472
2003The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor depositionKim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Cho, YH; Sun, YP; Yoon, EARTICLE521
Showing results 1 to 5 of 5

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