Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
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- Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
- Kim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, DH; Oh, HJ; Yoon, S; Sone, C; Park, Y; Yoon, E
- A1. In incorporation; A3. Quantum dots; B1. InGaN
- Issue Date
- ELSEVIER SCIENCE BV
- JOURNAL OF CRYSTAL GROWTH, v.269, no.1, pp.95 - 99
- In-rich InGaN quantum dot structures were grown by metalorganic chemical vapor deposition. Growth at low temperature made possible the growth of InGaN layers of high In content (over 70 InN%) with negligible formation of In metal droplets. The density, average diameter and height of typical InGaN quantum dots (QDs) were estimated at 8 X 10(9)/cm(2), 80 and 1.2 nm, respectively. The emission wavelength from the QDs could be controlled to the near ultraviolet (UV) region by variation of the growth conditions. This work demonstrates that In-rich InGaN QD active layers are very promising device structures for application as UV light-emitting diodes.
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