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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Author(s)
Kim, HJNa, HKwon, Soon-YongSeo, HCShin, YLee, KHKim, DHOh, HJYoon, SSone, CPark, YYoon, E
Issued Date
2004-08
DOI
10.1016/j.jcrysgro.2004.05.039
URI
https://scholarworks.unist.ac.kr/handle/201301/6553
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=3342896681
Citation
JOURNAL OF CRYSTAL GROWTH, v.269, no.1, pp.95 - 99
Abstract
In-rich InGaN quantum dot structures were grown by metalorganic chemical vapor deposition. Growth at low temperature made possible the growth of InGaN layers of high In content (over 70 InN%) with negligible formation of In metal droplets. The density, average diameter and height of typical InGaN quantum dots (QDs) were estimated at 8 X 10(9)/cm(2), 80 and 1.2 nm, respectively. The emission wavelength from the QDs could be controlled to the near ultraviolet (UV) region by variation of the growth conditions. This work demonstrates that In-rich InGaN QD active layers are very promising device structures for application as UV light-emitting diodes.
Publisher
ELSEVIER SCIENCE BV
ISSN
0022-0248

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