BROWSE

Related Researcher

Author's Photo

Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

ITEM VIEW & DOWNLOAD

Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Cited 20 times inthomson ciCited 26 times inthomson ci
Title
Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition
Author
Kim, HJNa, HKwon, Soon-YongSeo, HCKim, HJShin, YLee, KHKim, DHOh, HJYoon, SSone, CPark, YYoon, E
Keywords
A1. In incorporation; A3. Quantum dots; B1. InGaN
Issue Date
2004-08
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.269, no.1, pp.95 - 99
Abstract
In-rich InGaN quantum dot structures were grown by metalorganic chemical vapor deposition. Growth at low temperature made possible the growth of InGaN layers of high In content (over 70 InN%) with negligible formation of In metal droplets. The density, average diameter and height of typical InGaN quantum dots (QDs) were estimated at 8 X 10(9)/cm(2), 80 and 1.2 nm, respectively. The emission wavelength from the QDs could be controlled to the near ultraviolet (UV) region by variation of the growth conditions. This work demonstrates that In-rich InGaN QD active layers are very promising device structures for application as UV light-emitting diodes.
URI
Go to Link
DOI
10.1016/j.jcrysgro.2004.05.039
ISSN
0022-0248
Appears in Collections:
MSE_Journal Papers
Files in This Item:
2-s2.0-3342896681.pdf Download

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU