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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition

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Title
The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition
Author
Na, HKim, HJKwon, Soon-YongSone, CPark, YYoon, E
Keywords
MOLECULAR-BEAM EPITAXY; ARSENIC INCORPORATION; FILMS; NITROGEN; ENERGY
Issue Date
2004-09
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.1, no.10, pp.2462 - 2465
Abstract
20 nm GaNAs epilayers were grown on GaN/sapphire by metalorganic chemical vapor deposition. As growth temperature decreased from 720 to 565°C, it was found that As concentration was increased from 1.3 × 1020 and saturated at about 5-6 × 1020 cm-3. GaAs-like GaNAs islands were formed on GaN at 530°C. In case of GaNAs epilayers grown at 565 and 600°C, GaN-like GaNAs phases were observed by high-resolution X-ray diffraction (XRD) and low angle XRD. By low angle XRD and high-resolution TEM with electron nano-beam diffraction patterns, the FCC-stacked region in wurtzite matrix was clearly observed in thin GaNAs layers. We propose that this structural nonuniformity in GaNAs might be caused by the nonuniform distribution of As concentration.
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DOI
10.1002/pssc.200405010
ISSN
1862-6351
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